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SSM03N70GP-H

Silicon Standard

N-channel Enhancement-mode Power MOSFET

SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS(ON) 4.4Ω I D 2.5A Pb-free; R...


Silicon Standard

SSM03N70GP-H

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Description
SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS(ON) 4.4Ω I D 2.5A Pb-free; RoHS-compliant TO-220 G D S TO-220 (suffix P) DESCRIPTION The SSM03N70GP-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. The SSM03N70GP-H is in TO-220 for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD EAS IAR TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 100°C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy3 Avalanche current Storage temperatur...




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