SSM9972GI

SSM9972GI N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 60V R DS(ON) 18mΩ I D 35A Pb-free; RoHS-compliant TO-220CFM G D S TO-220CFM (suffix I) DESCRIPTION The SSM9972GI achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general switching circuits. The SSM9972GI is in TO-220CFM for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 100°C Total power dissipation, TC = 25°C Linear derating factor Value 60 ±25 35 22 120 31 0.25 Units V V A A A W W/°C TSTG TJ Storage temperature range Operating...