Document
SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
700V
R DS(ON)
2.4Ω
I D 4A
Pb-free; RoHS-compliant TO-220FM
G D S
TO-220FM (suffix I)
DESCRIPTION
The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits.
The SSM04N70BGF-H is in TO-220FM for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached.
These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS VGS ID
IDM PD
EAS IAR EAR TSTG TJ
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy3
Avalanche current
Repeti.