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SSM04N70BGF-H Dataheets PDF



Part Number SSM04N70BGF-H
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Datasheet SSM04N70BGF-H DatasheetSSM04N70BGF-H Datasheet (PDF)

SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS(ON) 2.4Ω I D 4A Pb-free; RoHS-compliant TO-220FM G D S TO-220FM (suffix I) DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. The SSM04N70BGF-H is in TO-220FM for through-hole mounting where a small footprint is require.

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SSM04N70BGF-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS(ON) 2.4Ω I D 4A Pb-free; RoHS-compliant TO-220FM G D S TO-220FM (suffix I) DESCRIPTION The SSM04N70BGF-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. The SSM04N70BGF-H is in TO-220FM for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS VGS ID IDM PD EAS IAR EAR TSTG TJ Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C Pulsed drain current1 TC = 100°C Total power dissipation, TC = 25°C Linear derating factor Single pulse avalanche energy3 Avalanche current Repeti.


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