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SSM2305AGN P-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.
DESCRIPTION
D
G S
BV DSS R DS(ON) ID
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The SSM2305AGN is in a SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount applications. This device is
suitable for low-voltage applications such as DC/DC converters and and general switching applications.
SOT-23-3
-30V 80mΩ -3.2A
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ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
THERMAL DATA
Symbol RΘJA
Parameter Maximum Thermal Resistance, Junction-ambient3
Rating -30 ± 12 -3.2 -2.6 -10 1.38 0.01 -55 to 150 -55 to 150
Value 90
Units V V A A A W
W/°C °C °C
Unit °C/W
2/1.