SSM2304AGN

SSM2304AGN N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement Lower gate charge Fast switching characteristics Description D S SOT-23-3 G BV DSS R DS(ON) ID Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The SSM2304AGN is in the SOT-23-3 package, which is widely preferred for lower power commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters and switches. RoHS compliant. Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 ± 20 2.5 2 10 1.38 0.01 -55 to 150 -55 to 150 Ther...