SSM2318GEN

SSM2318GEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 30V 720mΩ 1A Pb-free; RoHS-compliant SOT-23-3 D S SOT-23-3 G DESCRIPTION The SSM2318GEN acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM2318GEN is supplied in an RoHS-compliant SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications. The gate has internal ESD protection. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Pulsed drain current 1,2 TA = 70°C Total power dissipation 3, TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value 30 ...