SSM2306N

SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive Lower on-resistance Surface-mount package Description D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-23 package is widely used for commercial and industrial applications. G 20V 32mΩ 5.3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ± 12 5.3 4.3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 90 Unit °C/...