Document
SSM9980M/GM
DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Lower gate charge Fast switching characteristics
Description
D2 D2 D1 D1
SO-8
G2 S2
G1 S1
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
BV DSS R DS(ON) ID
80V 52mΩ 4.6A
D1 G1 G2
D2
The SSM9980M is in the SO-8 package, which is widely preferred for
S1 S2
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
This device is available with Pb-free lead finish (second-level interconnect) as SSM9980GM.
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1
Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature R.