SSM9926GM

SSM9926GM Dual N-channel Enhancement-mode Power MOSFETs PRODUCT SUMMARY BVDSS R DS(ON) ID 20V 30mΩ 6A Pb-free; RoHS-compliant SO-8 D2 D2 D1 D1 SO-8 G2 S2 G1 S1 DESCRIPTION The SSM9926GM acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9926GM is supplied in an RoHS-compliant SO-8 package, which is widely used for medium power commercial and industrial surface mount applications. ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current 3, T A = 25°C Pulsed drain current 1,2 TA = 70°C Total power dissipation 3, TA = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘJA Parameter Maximum thermal resistance, junction-ambient3 Value 20 ± 12 6 4.8 26 2 0.016 -55 to...