SSM6618M

SSM6618M N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Fast switching speed Surface-mount package Description D D D D SO-8 G SS S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BV DSS RDS(ON) ID 25V 30mΩ 7A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-amb Thermal Resistance Junction-ambient Rating 25 ± 20 7 5.8 30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 50 Unit °CW Rev.2.02 3/21/2004 www.SiliconStandard.com 1 of 6 SSM6618M Electrical Characteristics @ Tj=25oC (...