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HRS75N75V
HRS75N75V
70V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.0 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
Fab 2014
BVDSS = 70 V RDS(on) typ = 6 Pȍ ID = 48 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
70 48* 30* 192* ρ25 810 48 4.8 15
PD TJ, TSTG TL
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for sol.