N-Channel MOSFET
HRP80N06K
HRP80N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technolog...
Description
HRP80N06K
HRP80N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 90 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.3 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
August 2014
BVDSS = 60 V RDS(on) typ = Pȍ ID = 114 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR PD TJ, TSTG TL
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25) - Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
60 114 * 80 * 400 * ρ25 290
18 180 1.2 -55 to +...
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