HRP50N06K

HRP50N06K HRP50N06K 60V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 11.5 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested July 2014 BVDSS = 60 V RDS(on) typ = Pȍ ID = 40 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 60 40 28 140 ρ20 120 7.8 78 0.52 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +175 30...