HCU7N70S

HCU7N70S HCU7N70S 700V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 9 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.95 ȍ7\S#9GS=10V ‰ 100% Avalanche Tested Sep 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 700 5.0 3.2 13.0 ρ20 ρ30 EAS IAR EAR dv/dt Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) (Note 3) 40 1.2 0.1 50 PD TJ, TSTG TL Power Dissipatio...