N-Channel MOSFET
HFD6N70U_HFU6N70U
HFD6N70U / HFU6N70U
700V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugg...
Description
HFD6N70U_HFU6N70U
HFD6N70U / HFU6N70U
700V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 16.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
May2014
BVDSS = 700 V RDS(on) typ ȍ ID = 4.8 A
D-PAK I-PAK
2
1 3
HFD6N70U
1 2 3
HFU6N70U
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700 4.8 3.0 19.2 ρ30 170 4.8 9.5 4.5
PD
TJ, TST...
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