HFU5N70U

HFD5N70U_HFU5N70U HFD5N70U / HFU5N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 10.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 2.7 ȍ7\S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 700 V RDS(on) typ = 2.7 ȍ ID = 3.6 A D-PAK I-PAK 2 1 3 HFD5N70U 1 2 3 HFU5N70U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 700 3.6 2.3 14.4 ρ30 163 3.6 8.0 4.5 PD TJ, TST...