N-Channel MOSFET
HFP840
Sep 2011
HFP840
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 9.0 A
FEATURES
Originative New...
Description
HFP840
Sep 2011
HFP840
500V N-Channel MOSFET
BVDSS = 500 V RDS(on) typ ȍ ID = 9.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
500 9.0 5.4 36 ρͤ͑͡ 360 9.0 13.5 4.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25ఁ͚͑ ͑͑͑...
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