HFS640A

HFP640A_HFS640A Oct 2016 HFP640A / HFS640A 200V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 200 18 0.14 22 HFP640A TO-220 HFS640A TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 200 18.0 18.0 * 11.4 11.4 * 72.0 72.0 * ρ30 453 18 13.9 100 35 0.8 0.28 TJ, TSTG TL Operating and Storage Temperature Rang...