HFP730F

HFP730F_HFS730F Dec 2016 HFP730F / HFS730F 400V N-Channel MOSFET Features ‰ Originative New Design ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant HFP730F TO-220 Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 400 6 0.8 13 HFS730F TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 400 6.0 6.0 * 3.6 3.6 * 24 24 * ρ30 250 6.0 7.6 4.5 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 76 0.61 29 0.23 TJ, TSTG TL Operating and Storage Temperature Range Maxim...