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HFW10N65S
N-Channel MOSFET
Description
HFW10N65S July 2016 HFW10N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ ȍ ID = 9.2 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS...
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