N-Channel MOSFET
HFP3N90_HFS3N90
Oct 2016
HFP3N90 / HFS3N90
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Rob...
Description
HFP3N90_HFS3N90
Oct 2016
HFP3N90 / HFS3N90
900V N-Channel MOSFET
Features
Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% Avalanche Tested RoHS Compliant
Key Parameters
Parameter BVDSS ID
RDS(on), Typ Qg, Typ
Value 900 3 5 17
HFP3N90 TO-220
HFS3N90 TO-220F
Symbol
Unit V A ȍ nC
S D G
S D G
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
TO-220
TO-220F
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900 3.0 3.0 * 1.9 1.9 * 12 12 *
ρ30 200 3.0 10.7 4.5
PD
Power Dissipation (TC = 25) - Derate above 25
107 0.85
39 0.31
TJ, TSTG TL...
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