HFH10N90Z

HFH10N90Z_HFA10N90Z Oct 2016 HFH10N90Z / HFA10N90Z 900V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant ‰ Built-in ESD Diode Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 900 10 1.0 72 HFH10N90Z TO-3P HFA10N90Z TO-247 Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-3P TO-247 VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 900 10 10 * 6.3 6.3 * 40 40 * ρ30 950 9.0 29 4.0 PD Power Dissipation (TC = 25୅) - Derate above 25୅ ...