HCS65R160T

HCS65R160T Super Junction MOSFET Jan 2016 HCS65R160T 650V N-Channel Super Junction MOSFET Features ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely low switching loss ‰ Excellent stability and uniformity ‰ 100% Avalanche Tested Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 20 0.16 41 Unit V A ȍ nC Application ‰ Switch Mode Power Supply (SMPS) ‰ Uninterruptible Power Supply (UPS) ‰ Power Factor Correction (PFC) ‰ TV power & LED Lighting Power Package & Internal Circuit TO-220F G D S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG TL Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation (TC = 25୅) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for ...