2N7639-GA

2N7639-GA Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Electrically Isolated Base Plate  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package  RoHS Compliant VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 60 mΩ 32 A 80 D G GDS S TO – 257 (Isolated Base-plate Hermetic Package) Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actuators  General Purpose High-Temperature Switching  Amplifiers  Solar I...