Document
GA05JT03-46
Normally – OFF Silicon Carbide Junction Transistor
Features
225°C maximum operating temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Temperature Coefficient of RDS,ON Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D SG
TO-46
VDS =
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
300 V 240 mΩ 9A 110
D G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs > 20 µs Short-Circuit Withstand Capability Lowest-in-class Conduction Losses High Circuit Efficiency Minimal Input Signal Distortion High Amplifier Bandwidth
Applications
Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General Purpose High-Temperature Switching Amplifiers Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PF.