GS66508T

GS66508T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Top cooled configuration – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Dual gate pads for optimal board layout – Zero reverse recovery loss – RoHS 6 compliant Applications – On-board battery chargers – 400V DC-DC conversion – Inverters, UPS, and VFD motor drive – AC-DC power supplies (PFC & primary) – VHF small form factor power adapters – High frequency, high efficiency power conversion top view D TP GG S TP = thermal pad - internally connected to the source (S) and to the substrate. Absolute Maximum Ratings (Tcase = 25˚C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Tcase=25°C) Continuous Drain Current (Tcase=100°C) Pulsed Drain ...