GS66508P

GS66508P 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Zero reverse recovery charge – Source-sense for optimal high speed design – RoHS 6 compliant Applications – On-board battery chargers – 400V DC-DC conversion – Inverters, UPS, and VFD motor drive – AC-DC power supplies (PFC & primary) – VHF small form factor power adapters – High frequency, high efficiency power conversion top view D G TP* SS S * TP = thermal pad. TP is internally connected to the substrate and must be connected externally to the source (S) D G SS S Absolute Maximum Ratings (Tcase = 25˚C except as noted) Parameters Operating Junction Temperature Storage Temperature Range Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Tcase=25°C) (Note 1) Continuous Drain Current (Tcase=100°C) Pulsed Drain Cur...