BSS138-G

MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features -High density cell design for extremely low RDS(ON). -Rugged and Reliable. Mechanical data -Case: SOT-23, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026. Circuit diagram D G S 1 : Gate 2 : Source 3 : Drain 0.055(1.40) 0.047(1.20) 0.041(1.05) 0.035(0.90) SOT-23 0.118(3.00) 0.110(2.80) 3 12 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) 0.004(0.10) max 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Parameter Drain-source voltage Continuous gate-source voltage Continuous drain current Power dissipation Thermal resistance from Junction to ambient Operating temperature Storage temperature Symbol VDS VGS ID PD RΘJA TJ TSTG Value 50 ±20 0.22 0.35 357 150 -55 to +150 Units V V A W °C/W °C °C Company reserves the right to improve product design , functions and reliability with...