SW4N60K

SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1Ω)@VGS=10V  Low Gate Charge (Typ 13nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Adapter,LED, Charger TO-220F TO-251 TO-252 1 2 3 12 3 1 2 3 1. Gate 2. Drain 3. Source BVDSS : 600V ID : 4A RDS(ON) : 1Ω 2 1 General Description 3 This power MOSFET is produced with advanced super junction technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type 1 SW F 4N60K 2 SW I 4N60K 3 SW D 4N60K Absolute maximum ratings Marking SW4N60K SW4N60K SW4N60K Package TO-220F TO-251 TO-252 Packaging TUBE TUBE REEL Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy Repetitive avalanche energy MOSFET dv/dt ruggedness (@VDS=0~400V) (note 1) (note 2) (note 1) Value TO-220F TO-251 TO-252 600 4* 2.5* 12 ±30 50 5 30 Unit V A A A V mJ mJ V/ns dv/dt PD TSTG, TJ TL Peak diode recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 2...