MOSFET
SAMWIN
SW1N60A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Imp...
Description
SAMWIN
SW1N60A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
12 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS.
BVDSS : 600V ID : 0.5A RDS(ON) : 15ohm
2
1
3
Order Codes
Item 1
Sales Type SW C 1N60A
Marking SW1N60A
Package TO-92
Packaging TAPE
Absolute maximum ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter
Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Recover...
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