Document
SAMWIN
SW1N60L
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-92
1 2 3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS.
BVDSS : 600V ID : 0.3A RDS(ON) : 23ohm
2
1
3
Order Codes
Item 1
Sales Type SW C 1N60L
Marking SW1N60L
Package TO-92
Packaging TAPE
Absolute maximum ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ TL
Parameter
Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed Gate to Source Voltage Single pulsed Avalanche Energy Repetitive Avalanche Energy Peak diode Reco.