SW10N65K

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF BVDSS : 650V  High ruggedness  Low RDS(ON) (Typ 0.36Ω)@VGS=10V  Low Gate Charge (Typ29nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:LED, Charger, PC Power 12 3 12 3 12 3 12 3 12 3 12 3 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced super junction technology of SAMWIN. ID : 10A RDS(ON) :0.36 Ω 2 1 3 This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type 1 SW P 10N65K 2 SW F 10N65K 3 SW N 10N65K 4 SW D 10N65K 5 SW U 10N65K 6 SW MN 10N65K Marking SW10N65K SW10N65K SW10N65K SW10N65K SW10N65K SW10N65K Package TO-220 TO-220F TO-251N TO-252 TO-262 TO-220SF Packaging TUBE TUBE TUBE REEL TUBE TUBE Absolute maximum ratings Symbol Parameter Value Unit TO220 TO220F TO251N TO252 TO262 TO220SF VDSS ID IDM VGS EAS EAR dv/dt Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed (note 1) Gate to source voltage Single pulsed avalanche energy (note 2) Repetitive avalanche energy (note 1) MOSFET dv/dt ruggedness (@VDS=0~400V) 650 V 10* A 6.3* A 30 A ±30 V 270 mJ 60 mJ 30 V/ns dv/dt Peak d...