SW6N60

SAMWIN SW6N60 N-channel MOSFET Features TO-220F TO-251 TO-252 ■ High ruggedness ■ RDS(ON) (Max 1.5Ω)@VGS=10V ■ Gate Charge (Typical 29nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 12 3 1. Gate 2. Drain 3. Source General Description These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers BVDSS : 600V ID : 6A RDS(ON) :1.5ohm 2 1 3 Order Codes Item 1 2 3 Sales Type SW F 6N60 SW I 6N60 SW D 6N60 Absolute maximum ratings Marking SW6N60 SW6N60 SW6N60 Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt Drain to Source Voltage Continuous Drain Current (@TC=25oC) Drain curre...