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SW60N06T Dataheets PDF



Part Number SW60N06T
Manufacturers SEMIPOWER
Logo SEMIPOWER
Description MOSFET
Datasheet SW60N06T DatasheetSW60N06T Datasheet (PDF)

SAMWIN SW60N06T N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Thi.

  SW60N06T   SW60N06T



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SAMWIN SW60N06T N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 60V ID : 60A RDS(ON) :8mΩ 2 1 3 Order Codes Item 1 Sales Type SW P 60N06 Marking SW60N06T Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Sing.


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