SW100N10B

SAMWIN SW100N10B N-channel TO-220 MOSFET Features TO-220 ■ High ruggedness ■ RDS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. BVDSS : 100V ID : 100A RDS(ON) : 10.5mΩ 2 1 3 Order Codes Item 1 Sales Type SW P 100N10 Marking SW 100N10B Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Parameter Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source...