N-Channel MOSFET
SW180N75A
Features
High ruggedness Low RDS(ON) (Typ 2.8mΩ)@VGS=10V Low Gate Charge (Typ 178nC) Improved dv/dt C...
Description
SW180N75A
Features
High ruggedness Low RDS(ON) (Typ 2.8mΩ)@VGS=10V Low Gate Charge (Typ 178nC) Improved dv/dt Capability 100% Avalanche Tested ApplicationSynchronous Rectification,
Li Battery Protect Board, Inverter
N-channel Enhanced mode TO-220 MOSFET
TO-220
12 3
1. Gate 2. Drain 3. Source
BVDSS : 75V
ID
: 180A
RDS(ON) : 2.8mΩ
2
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
1
SW P 180N75A
Marking SW 180N75A
Package TO-220
Packaging TUBE
Absolute maximum ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed
(note 1)
Gate to source voltage Single pulsed avalanche energy
(note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC) Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient
Value 75 180* 113...
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