SVD50N06T/D/MJ_Datasheet
50A, 60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD50N06T is an N-channel enhancement mode high v...
SVD50N06T/D/MJ_Datasheet
50A, 60V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD50N06T is an N-channel enhancement mode high voltage MOS field effect
transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It's widely used in electronic ballasts and low power SMPS.
FEATURES
∗ 50A,60V,RDS(on)(typ)=18mΩ@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVD50N06T SVD50N06D SVD50N06DTR SVD50N06MJ
Package TO-220-3L TO-252-2L TO-252-2L TO-251J-3L
Marking SVD50N06T SVD50N06D SVD50N06D SVD50N06MJ
Material Pb free Pb free Pb free Pb free
Packing Tube Tube
Tape & Reel Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2013...