SVD3205T | Silan Microelectronics
MOSFET
SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and with.
- SVD3205T | Silan Microelectronics
- MOSFET
- SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhanceme.
- SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commu.
- SVD3205T | Silan Microelectronics
- 55V N-CHANNEL MOSFET
- SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhanceme.
- SVD3205T_Datasheet
110A, 55V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD3205T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commu.
