SVF8N60AF

SVF8N60AF_Datasheet 8A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF8N60AF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 8A,600V,RDS(on)(typ.)=0.75Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF8N60AF Package TO-220F-3L Marking SVF8N60AF Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.02.21 Page 1 of 7 SVF8N60AF_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise n...