SVF3N50D

SVF3N50D_Datasheet 3A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF3N50D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 3A,500V,RDS(on)(typ.)=2.7Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF3N50D SVF3N50DTR SVF3N50MJ Package Type TO-252-2L TO-252-2L TO-251J-3L Marking SVF3N50D SVF3N50D SVF3N50MJ Material Pb free Pb free Pb free Packing Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2013...