SVF18N50F/T/PN/FJ_Datasheet
18A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF18N50F/T/PN/FJ is an N-channel enhancement...
SVF18N50F/T/PN/FJ_Datasheet
18A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
18A,500V,RDS(on)(typ.)=0.26@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF18N50F SVF18N50T SVF18N50PN SVF18N50FJ
Package
TO-220F-3L TO-220-3L
TO-3P TO-220FJ-3L
Marking
SVF18N50F SVF18N50T
18N50 SVF18N50FJ
Hazardous Substance Control
Pb free Pb free Pb free Halogen free
Packing
Tube Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.1 Page 1 of 10
SVF18N50F/T/PN/FJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC = 25°C TC = 100°C
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS VGS
SVF18N50F/FJ
ID
IDM 54
PD 0.43
EAS TJ Tstg
Ratings SVF18N50T
500 ±3...