SVS6N60D

SVS6N60D_Datasheet 6A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVS6N60D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  6A,600V, RDS(on)(typ.)=0.6Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability ORDERING INFORMATION Part No. SVS6N60D Package TO-252-2L Marking SVS6N60D Material Halogen free ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, TC=25°C) Characteristics Symbol Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipati...