SVS47N60PN

SVS47N60PN_Datasheet 47A, 600V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS47N60PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  47A, 600V, RDS(on)(typ.)=55m@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 1 23 TO-3P ORDERING INFORMATION Part No. SVS47N60PN Package TO-3P Marking 47N60 Hazardous Substance Control Pb free Packing Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Ratings 600 ±30 47 30 188 415 3.32 2103 -55～+150 -55～+150 Unit V V A A W W/C mJ C C HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.6 Page 1 of 7 SVS47N60PN_Datasheet THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junct...