SVS7N65MJ

Silan Microelectronics SVS7N65F/D/MJ_Datasheet 7A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS7N65F/D/MJ is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L FEATURES  7A, 650V, RDS(on)(typ)=0.66Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No. SVS7N65F SVS7N65D SVS7N65DTR SVS7N65MJ Package TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVS7N65F SVS7N65D SVS7N65D SVS7N65MJ Material Halogen free ...