MITSUBISHI-LSls
MsK4164ANL-12, -15
65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65536...
MITSUBISHI-LSls
MsK4164ANL-12, -15
65 536-BIT (65 536-WORD BY I-BIT) DYNAMIC RAM
DESCRIPTION
This is a family of 65536-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicongate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential_ The use of double-layer polysilicon process technology and a single-
transistor dynamic storage cell privide high circuit density at reduced costs, and the use of dynamic circuitry including sense amplifiers assures low power dissipation_ Multiplexed address inputs permit both a reduction in pins to the 16-pin zigzag inline package configuration and an increase in system densities_ The M5K4164AN L operates on a 5V power supply using the on-chip substrate bias generator_
PIN CONFIGURATION (TOP VIEW)
I1ADDRESS INPUT A6 -+
!COL~~R~:~~~~i CAS -+ 1]
INO CONNECTIONI NC
§J ~ [._!
DATA OUTPUT Vss (OV)
WRITE CONTROL INPUT
W -+
Ao -+
L-,
"91
;...;. ~
L~...