Static RAM. M5M5116FP-15 Datasheet

M5M5116FP-15 RAM. Datasheet pdf. Equivalent


Mitsubishi M5M5116FP-15
MITSUBISHI LSls
MSMSI16FP, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5116FP series of 2048-word by 8-bit asynchro-
nous silicon gate CMOS static RAM operates on a single 5V
power supply and is designed for easy use in applications
requiring battery backup.
Two chip select inputs are available: S2 provides the
minimum standby current with battery back·up while SI
enables high-speed memory access.
The series is packaged in a small 24-pin plastic DI L flat
package.
FEATURES
Type name
Access time
(max)
M5M5116FP-15 150ns
M5M5116FP
200ns
S";" access
time
(max)
80ns
100ns
Current consumption
Active
(max)
Stand-by
(max)
SOmA
15i'A
• Single 5V power supply.
• External clock and refresh operation not required.
• Data can be held with 2V supply voltage.
• All inputs and outputs are directly TTL compatible.
• All outputs are 3-state with OR-tie capability.
• Easy expansion of memory capacity with chip select
signal.
• Common input!output for data pins.
APPLICATIONS
Battery drive, small-capacity memory units with battery
back·up
PIN CONFIGURATION (TOP VIEW)
ADDRESS
INPUTS A3
A2
Al
Ao
iDATA DO,
INPUTS/ D02
OUTPUTS D03
(OV) GND
Vee (5V)
23 - As I[ ADDRESS INPUTS
22 - A9
21 - Vi )%RpIJi CONTROL
20 - 51 CHIP SELECT INPUT
19 - A 10 ADDRESS INPUT
5218 - CHIP SELECT INPUT
17 - DOs
DATA
INPUTS/
OUTPUTS
Outline 24P2W
FUNCTION
The M5M5116FP series has a 2048-word by 8-bit configura-
tion. It operates on a single 5V supply and its inputs!
outputs are directly TTL compatible. Its completely static
circuitry obviates the need for external clock and refresh
operations and makes it very easy to use.
The data of the DQ pin are written when the address is
designated by address signals Ao - A IO , the 5;" and S2
signals turn low-level, and the W signal is set low.
When for the reading operation the W signal is set high,
BLOCK DIAGRAM
'ADDRESS INPUTS
- - -- - - - - -
- ----,
co
w
0
14
0
~
128
0
S
0
co
2048~WORD
X 8~BIT RAM
(128 ROWS X
128 COLUMNS)
co
w
~
1-+++f+.-~(15 006
@)007
I-+++++-I+..---.@ DO!!
DATA
INPUTS/OUTPUTS
I
,
I
WRITE CONTROL INPUT
II _S; 18
CHIP SELECT INPUTS
s,
L -_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __
• MITSUBISHI
4-8 ~ELECTRIC


M5M5116FP-15 Datasheet
Recommendation M5M5116FP-15 Datasheet
Part M5M5116FP-15
Description 16K-Bit CMOS Static RAM
Feature M5M5116FP-15; MITSUBISHI LSls MSMSI16FP, -15 16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5.
Manufacture Mitsubishi
Datasheet
Download M5M5116FP-15 Datasheet




Mitsubishi M5M5116FP-15
MITSUBISHI LSI.
M5M5116FP, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
the 51 and 52 signals are set low, pin DO is set to the out-
put mode and the address is designated by signals Ao -
AIO , the data of the designated address are output to pin
DO.
When signal 51 or 52 is set high, the chip is set to a non-
select status in which neither reading nor writing is possible.
5ince the output floats (high-impedance state). OR-tie is
possible with the other chip output pins.
The standby mode is established when signal 52 is set to
Vee. The supply current is now reduced to the very low
level of 151lA (max) and the data in the memory are
retained even if the supply voltage falls to 2V, permitting
power-down during non·operation or battery back-up
during power failures.
OPERATION MODES
5, 52
W
Mode
X H X Non-select
H L X Non-select
L L L Write
L L H Read
DO
High impedance
High impedance
D'N
DOUT
ICC
Standby
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
VI
Vo
Pd
Topr
Tstg
Parameter
Supply voltage
Input voltage
Output voltage
Power dissipation
Operating free-air ambient temperature
Storage temperature·
Conditions
With respect to GND
Ta=25"C
Limits
-0.3-7
-0.3-Vcc+ 0 .3
O-VCC
700
0-70
-65-150
Unit
V
V
V
mW
'C
"C
RECOMMENDED OPERATING CONDITIONS (Ta=0-70·C. unless otherwise noted)
Symbol
VCC
GND
VIL
VIH
Parameter
Supply voltage
Supply voltage
Low-level input voltage
High-level input voltage
Min
4.5
-0.3
2.2
Limits
Typ Max
5 5.5
0
0.8
Vcc+ 0.3
Unit
V
V
V
V
ELECTRICAL CHARACTERISTICS (Ta=O-70·C. VcC=5V±10%. unlessotherwisenoted)
Symbol
Parameter
VIH High-level input voltage
VIL Low-level input voltage
VOH
High-level output voltage
VOL
Low-level output voltage
II Input current
IOZH
Off-state high-level output current
IOZL
Icc,
Off-state low-level output current
Supply current
M5M5116FP-15
M5M5116FP
ICC2
Supply current
/ M5M5116FP-15
M5M5116FP
ICC3
Standby 'supply current
ICC4
Cj
Standby supply current
Input capacitance (Ta =25"C)
Co Output capacitance (Ta = 25"C )
Ie ..
Note 1: Current flowing Into an shall be POSItive (no sign).
2: Typical values: Vee ~ 5V. T a'" 25°C.
Test conditions
IOH=-lmA
IOL= 2.1mA
VI= 0 -Vcc
51 or 52=VIH. Vo=2.4V- V cc
5, or 52=VIH. Vo=OV
VI (S;'> =VI (5;) = 0 V Output pin open
Other inputs = V CC or 0 V
Min
2.2
-0.3
2.4
VI (S,)=VI (S,)=VIL Output pin open
Other inputs =VIH
52=VeC-0.2V. Other inputs = 0 -Vce
52=VIH. Other inputs = 0 - V CO
VI=GND, Vi=25mVrms. f=IMHz
Vo=GND. VO=25mVrms. f=lMHz
Limits
Typ Max
VcC+ 0.3
0.8
0.4
±1
1
-1
45
30 45
50
35 50
15
2
6
8
Unit
V
V
V
V
J.lA
J.lA
J.lA
mA
rnA
mA
mA
J.lA
mA
pF
pF
• MITSUBISHI
~ELECTRIC
4-9



Mitsubishi M5M5116FP-15
MITSUBISHI LSls
M5M5116FP, ·15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
SWITCHING CHARACTERISTICS(Ta= 0 -10·C, Voo=5V±10%, unlessotherwisenoted)
READ CYCLE
Symbol
Parameter
tOR
ta (A)
ta (5,)
ta (5,)
tdls (5,)
td,s (5,)
ten (5,)
ten (5,)
tv (A)
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Output disable time from Sl
Output disable time from S2
Output enable time from Sl
Output enable time from S2
Data valid time from address
M5M5116FP-15
Limits
Min Typ
Max
150
150
80
150
50
50
15
15
20
M5M5116FP
Limits
Min Typ Max
200
200
100
200
60
60
15
15
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING REOUIREMENTS (Ta =0-10·C, Voo=5V ±10%, unless otherwise noted)
WRITE CYCLE
Symbol
Parameter
tew
tw(W)
tsu (A)
tsu (5)
tsu (0)
th (0)
tree (w)
tdls (W)
ten (W)
Write cycle time
Write pulse width
Address set-up time
Chip select set-up time
Data set-up time
Data hold time
Write recovery time
Output disable time from write
Output enable time from write
M5M5116FP-15
Limits
Mi.n Typ Max
150
90
0
90
40
0
10
50
15
M5M5116FP
Limits
Mit:! Typ
200
120
0
120
60
0
10
15
Max
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta= 0 -10·C, unlessotherwisenoted)
Symbol
Parameter
.
Test conditions
Min
VOO (PO) Power·down supply voltage
2
V, (5,)
Chip select input voltage
2.2V~VoO (PO)
2V~VoO (PO)~2 .2V
2.2
100 (PO)
Power·down supply current
VOO=3V, Other inputs =3V
Note 3: When $2 IS operated at 2.2V (VIH min). the supply current at which VCCWD~ is between 4.5V and 2.4V, is specified by ICC4.
Limits
Typ
VOO (PO)
Max
10
Unit
V
V
V
/-I A
TIMING REOUIREMENTS (T a =0-10"C, unlessotherwisenoted)
Symbol
tsu (PO)
tree (PO)
Parameter
Power-down set-up time
Power-down recovery time
Test conditions
Limits
Min Typ Max
0
tOR
Unit
ns
ns
4-10
• MITSUBISHI
.... ELECTRIC







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