Static RAM. M5M5117P-15 Datasheet

M5M5117P-15 RAM. Datasheet pdf. Equivalent


Mitsubishi M5M5117P-15
MITSUBISHI LSls
M5M5117P, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5117P series of 2048-word by a-bit asynchronous
silicon gate CMOS static RAM operates on a single 5V
power supply and is designed for easy use in applications
requiring battery backup_
A chip select input, S, is available to provide the mini-
mum standby current with battery back-up while an output
enable input, OE, enables high-speed memory access_
The series features pin compatibility with the M5L2716K
16K EPROM and M58725P 16K static RAM, and it is
packaged in a standard 24-pin plastic DIL package_
FEATURES
Type name
Access time
(max)
M5M5117P-15
M5M5117P
lS0ns
200ns
-
OE access
time
(max)
80ns
lOOns
Current consumption
Active
(max)
Stand-by
(max)
SOmA
lS/lA
• Single 5V power supply_
• External clock and refresh operation not required_
• Data can be held with 2V supply voltage_
• All inputs, and outputs are directly TTL compatible_
• All outputs are 3-state with OR-tie capability_
• Easy expansion of memory capacity with chip select
signal.
• Common input/output for data pins.
• Pin compatibility with M5L2716K 16K EPROM and
M58725P 16K static RAM.
APPLICATIONS
Battery drive, small-capacity memory units with battery
back-up
PIN CONFIGURATION (TOP VIEW)
A7 - \
ADDRESS
INPUTS
A.
A,
A,
Al
Ao
IDATA DOl
INPUTS/I DO,
OUTPUTS DO,
(DV) GND
Vcc(5V)
23 ~ As I ADDRESS
I" ~ A, INPUTS
w21 ~
~~ITi CONTROL
20 ~ 6E ?NUp1]'+JT ENABLE
" ~ AID ADDRESS INPUT
CHIP SELECT
INPUT
DATA
INPUTS/
OUTPUTS
Outline 24P4
FUNCTION
The M5M5117P series has a 2048-word by 8-bit configura-
tion. It operates on a single 5V supply and its inputs/
outputs are directly TTL compatible. Its completely static
circuitry obviates the need for external clock and refresh
operations and makes it very easy to use.
The data of the DO pin are written when the address is
designated by address signals Ao - AIO , the S signals turns
low-level, and the W signal is set low.
When for the reading operation the W signal is set high,
the Sand OE signals are set low, pin DO is set to the output
mode and the address is designated by signals Ao - AIO ,
the data of the designated address are output to pin DQ.
BLOCK DIAGRAM
ADDRESS INPUTS
,.--
-
r--
- r--
1
A, 1)------>
A, 2~~
c:
UJ
*~ ~As
3)------>
c:
D
A. 4)------> Dc:
D
0
U
UJ
s:A, 5
A, ~2
A, ~3
«UJ
:;dt
0:::>
c:1D
D
a0:
+--_+T----,_-t----+-T-'~---f--.Tf____'o1-++++1-++,..--.-.(1"-T
2048-WORD
X 8-BIT RAM
(128 ROWS X 128
COLUMNS)
~ ~ h----->(,~ ~~;
~ f-+h-----o(jll 003
:-. ~ ~ ID
13 DO.
« I • - f-
14 005
UJ 12
15 DO,
~~
16 007
DO,
.~~ ~A2 6
Al 7
o~ a:
«~ 8 ~ ~
Ao 8
-+=-Zill
:2(J)
=>0
...JU
:J(I)
Ow
A 10 19
6~ uo
16
I
I
, ~-
DATA
INPUTS/OUTPUTS
WRITE CONTROL INPUT Vi r21)--Tr =FV::f}---+--------..J
~ ---------......JTCHIP SELECT INPUT S
.-o[)>----......
~VCC(5V)
12 GND (DV)
OUTPUT ENABLE INPUT OE ~ ~}------~----------'
'-------- --- - --- - --- - --- - ------'
• MITSUBISHI
~ELECTRIC
4-13


M5M5117P-15 Datasheet
Recommendation M5M5117P-15 Datasheet
Part M5M5117P-15
Description 16K-Bit CMOS Static RAM
Feature M5M5117P-15; MITSUBISHI LSls M5M5117P, -15 16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M51.
Manufacture Mitsubishi
Datasheet
Download M5M5117P-15 Datasheet




Mitsubishi M5M5117P-15
MITSUBISHI LSls
M5M5117P, ·15
16384-BIT'(2048-WORD BY8-BIT) CMOS STATIC RAM
When signal S is set high, the chip is set to a non-select
status in which neither reading nor writing is possible.
Since the output floats (high·impedance state), OR-tie is
possible with the other chip output pins. When the DE
signal is set high, the output is put in the floating state.
When DE is set high during writing for use with an I/O
bus system, bus contention between the input and output
data can be avoided.
'
The standby mode is established when signal S is set to
Vee. The supply current is now reduced to the very low
level of 1~A (max) and the data in the memory are
retained even if the supply voltage falls to 2V, permitting
power-down during non-operation or battery back-Up
during power failures.
OPERATION MODES
S OE W
HXX
LXL
L LH
L HH
Mode
Non-select
Write
Read
Output disable
DQ
High impedance
DIN
DOUT
High impedance
ICC
Standby
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
Symbol
Vee
VI
Vo
Pd
Topr
Tstg
Supply voltage
Parameter
Input voltage
Output voltage
9t1Wer dissipation
Operating free-air ambient temperature
Storage temperature
Conditions
With respect to GND
Ta=25'C
RECOMMENDED OPERATING CONDITIONS (Ta=0-70'C, unless otherwise noted)
Symbol
Veo
GND
VIL
VIH
Parameter
Supply voltage
Supply voltage
Low'level input voltage
High-level input voltage
Min
4.5
-0.3
2.2
Limits
Typ Max
5 5.5
0
0.8
Voo+0.3
Unit
V
V
V
V
Limits
-0.3-7
-0.3-Vee+0.3
O-Veo
700
0-70
-65-150
Unit
V
V
V
mW
'c
'c
ELECTRICAL CHARACTERISTICS (Ta",,0-70'C, Voe=5V±10%, unless otherwise noted)
Symbol
Parameter
VIH High-level input voltage
VIL
VOH
VOL
Low-level input voltage
High-level output voltage
Low-level output voltage
II Input current
IOZH
Off·state high·level output current
IOZL
1001
Off-state low-level output current
Supply current
M5M5117P-15
M5M5117P
loe2
Supply current
M5M5117P-15
M5M5117P
loe3
Standby supply-current
lee4
f---
Ci
Standby supply current
Input capacitance ITa=25'C)
Co Output capacitance ITa =25'C)
Note 1: Current flowin~ into an IC shall be positive (no sign).
2: Typical values' Vee = 5V. Ta = 25°C.
Test conditions
IOH=-1mA
IOL= 2.1mA
VI=O-Vee
S or OE=VIH, VO=2.4V- Veo
S or OE=VIH, Vo~OV
VI(S) =OV Output pin open
Other inputs = V co
VI(ii) =VIL Output pin open
Other inputs =VIH
S=VOo-0.2V,Otherinputs=0-Voo
S=VIH, Other inputs =0 -Vee
VI=GND, Vi=25mVrms, f=lMHz
Vo=GND, Vo=25mVrms, f=1MHz
Min
2.2
-0.3
2.4
Limits
Typ Max
Voe+0.3
0.8
0.4
±1
1
-1
45
30 45
50
35 50
15
2
6
8
Unit
V
V
V
V
I'A
I'A
I'A
mA
mA
mA
mA
I'A
mA
pF
pF
4-14
• MITSUBISHI
..... ELECTRIC



Mitsubishi M5M5117P-15
MITSUBISHILSls
M5M5117P, -15
163a4-BIT (204a-WORD BY a-BIT) CMOS STATIC RAM
SWITCHING CHARACTERISTICS (Ta=0-70'C, Vee=5V±10%, unless otherwise noted)
READ CYCLE
Symbol
Parameter
teR
ta (A)
ta (5)
ta (DE)
tdls (5)
tdls (DE)
ten (51
ten WEI
tv (A)
Read cycle time
Address access time
Chip select access time
Output enable access time
Output disable time from S
Output disable time from DE
Output enable time from S
Output enable time from OE
Da·ta valid time from address
M5M5117P-15
Limits
Min Typ
150
15
15
20
Max
150
150
80
50
50
Min
200
15
15
20
M5M5117P
Limits
Typ
Max
200
200
100
60
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING REQUIREMENTS (Ta =0-70'C, Vec=5V ±1 0%, unless otherwise noted)
WRITE CYCLE
Symbol
Parameter
tew
tw(W)
tsu (A)
tsu (5)
tsu (0)
th (0)
tree (wi
tSU(oE)
tdis(DEI
tdis (w)
ten (WI
Write cycle time
Write pulse width
Address set-up time
Chip select set-up time
Oat8 set-up time
Data hold time
Write recovery time
Output enable set-up time
Output disable time from DE
Output disable time from write
Output enable time from write
M5M5117P-15
limits
Min Typ
150
90
0
90
40
0
10
40
15
Max
50
50
M5M5117P
Limits
Min Typ
200
120
0
120
60
0
10
40
15
Max
60
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta=0-70'C, unless otherwise noted)
Symbol
Parameter
Test conditions
Min
Veo (PO) Power-down supply voltage
2
V,(5)
Chip select input voltage
2.2V~VOO (PO)
2V~Vee (PO)~2 .2V
2.2
leo (PO)
Power-down supply current
Vee=3V, Other inputs =3V
Note 3: When S is operated at 2.2V (VIH min), the supply current at which Vee (PO) is between 4.5V and 2.4V, is specified by Ice4.
TIMING REQUIREMENTS (Ta=0-70'C, unless otherwise noted)
Limits
Typ
Vee (PO)
Max
10
Symbol
Parameter
tsu (PO)
tree (PO)
Power-down set-up time
Power-down recovery time
Test conditions
Limits
Min Typ Max
0
teR
Unit
V
V
V
I"A
Unit
ns
ns
• MITSUBISHI
"'ELECTRIC
4-15







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)