Static RAM. M5M5117FP-15 Datasheet

M5M5117FP-15 RAM. Datasheet pdf. Equivalent


Mitsubishi M5M5117FP-15
MITSUBISHI LSI.
MsMsI17FP, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5117FP series of 2048-word by 8-bit asynchro-
nous silicon gate CMOS static RAM operates on a single 5V
power supply and is designed for easy use in applications
requiring battery backup.
A chip select input, S, is available to provide the mini-
mum standby current with battery back-up while an output
enable input, OE, enables high-speed memory access.
The series features pin compatibility with the M5L2716K
16K EPROM and M58725P 16K static RAM, and it is
packaged in a small 24-pin plastic OIL flat package.
FEATURES
Type name
Access time
(max)
M5M5117FP-15 150ns
M5M5117FP
200ns
DE access
time
(max)
80ns
lOOns
Current consumption
Active
(max)
Stand-by
(max)
SOmA
15iIA
• Single 5V power supply.
• External clock and refresh operation not required.
• Data can be held with 2V supply voltage.
• All inputs, and outputs are directly TTL compatible.
• All outputs are 3-state with OR-tie capability.
• Easy expansion of memory capacity with chip select
signal.
• Common input/output for data pins.
• Pin compatibility with M5L2716K 16K EPROM and
M58725P 16K static RAM.
APPLICATIONS
Battery drive, small-capacity memory units with battery
back-up
PIN CONFIGURATION (TOP VIEW)
ADDRESS A4
INPUTS AJ
Az
Al
Ao
IDATA DO,
INPUTS/ DOz
OUTPUTS DOJ
(OV) GND
Vee (5V)
I23 ~ A, ADDRESS
I22 ~ A, INPUTS
21 ~ Iii ~~\Jf CONTROL
2D ~ DE ?NUpTI'TUT ENABLE
19 ~ A 10 ADDRESS INPUT
CHIP SELECT
INPUT
DATA
INPUTSI
OUTPUTS
Outline 24P2W
FUNCTION
The M5M5117FP series has a 2048-word by 8-bit configura-
tion. It operates on a single 5V supply and its inputs/
outputs are directly TTL compatible. Its completely static
circuitry obviates the need for external clock and refresh
operations and makes it very easy to use.
The data of the DO pin are written when the address is
designated by address signals Ao - AIO , the Ssignals turns
low-level, and the W signal is set low.
When for the reading operation the W signal is set high,
the Sand OE signals are set low, pin DO is set to the output
mode and the address is designated by signals Ao - AIO ,
the data of the designated address are output to pin DO.
BLOCK DIAGRAM
ADDRESS INPUTS
A,
As
2048-WORD
X 8-BIT RAM
(128 ROWS X 128
COLUMNS)
DATA
I NPUTS/OUTPUTS
WRITE CONTROL INPUT Vi
CHIP SELECT INPU" S 18
OUTPUT ENABLE INPUT DE 20
L.._ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
~
4-18
-• -- MITSUBISHI
;"ELECTRIC


M5M5117FP-15 Datasheet
Recommendation M5M5117FP-15 Datasheet
Part M5M5117FP-15
Description 16K-Bit CMOS Static RAM
Feature M5M5117FP-15; MITSUBISHI LSI. MsMsI17FP, -15 16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M51.
Manufacture Mitsubishi
Datasheet
Download M5M5117FP-15 Datasheet




Mitsubishi M5M5117FP-15
MITSUBISHI LSls
M5M5117FP, ·15
16384·BIT (2048·WORD BY 8-BIT) CMOS STATIC RAM
When signal S is set high, the chip is set to a non-select
status in which neither reading nor writing is possible.
Since the output floats (high·impedance stateI. OR·tie is
possible with the other chip output pins. When the OE
signal is set high, the output is put in the floating state.
When OE is set high during writing for use with an 1/0
bus system, bus contention between the input and output
data can be avoided.
The standby mode is established when signal S is set to
Vee. The supply current is now reduced to the very low
level of 15p.A (max) and the data in the memory are
retained even i.f the supply voltage falls to 2V, permitting
power·down during non-operation or battery back-up
during power failures.
OPERATION MODES
S OE W
H XX
L XL
LLH
LHH
Mode
Non-select
Write
Read
Output disable
DO
High impedance
D,N
DOUT
High impedance
IcC
Standby
Active
Active
Active
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
V,
Vo
Pd
Topr
Tstg
Supply voltage
Parameter
Input voltage
Output voltage
Power dissipation
Operating free-air ambient temperature
Storage temperature
Conditions
With respect to GND
Ta~25'C
RECOMMENDED OPERATING CONDITIONS (Ta~0-70'C, unless otherwise noted)
Symbol
Vee
GND
V,L
V,H
Parameter
Supply voltage
Supply voltage
Low-level input voltage
High-level input voltage
Min
4.5
~0.3
2.2
Limits
Typ Max
5 5.5
0
0.8
Vce+ 0.3
Unit
V
V
V
V
Limits
~0.3 - 7
~0.3-Vec+0.3
O-Vcc
700
0-70
~65-150
Unit
V
V
V
mW
'c
·c
ELECTRICAL CHARACTERISTICS (Ta~0-70'C, Vec~5V ±10%. unless otherwise noted)
Symbol
Parameter
V,H High-level input voltage
V,L Low-level input voltage
VOH
VOL
High-level output voltage
Low-level output voltage
I, Input current
IOZH
Off-state high-level output current
IOZL
ICCI
Off-state low-level output current
Supply current
M5M5117FP-15
M5M5117FP
ICC2
Supply current
M5M5117FP-15
M5M5117FP
Ice3
ICC4
CI
Standby supply current
Standby supply current
Input capacitance ITa =25'C)
Co Output capacitance ITa =25'C)
Note 1: Current flowing into an IC shall be positive (no signl.
2: Typical values: Vee = 5V, Ta"" 25°C.
Test conditions
IOH~~lmA
IOL~ 2.1mA
V,~O-VCC
S or OE~VIH, Vo~2.4V-Vcc
S or OE~VIH, Vo~OV
VI (5) =OV Output pin open
Other inputs = Vee
VI (5) =VIL Output pin open
Other inputs = ViH
S=Vcc- O _2V ,Otherinputs=O-Vcc
S~V'H, Other inputs = 0 - Vee
VI~GND, V, ~25mVrms, f-1MHz
Vo~GND, Vo~25mVrms. f~lMHz
Min
2.2
--0.3
2.4
Limits
Typ Max
Vcc+0.3
0.8
0.4
±1
1
-1
45
30 45
50
35 50
15
2
6
8
Unit
V
V
V
V
J1A
J1A
J1A
mA
mA
mA
mA
J1A
mA
pF
pF
• MITSUBISHI
. . . . ELECTRIC
4-19



Mitsubishi M5M5117FP-15
MITSUBISHI LSls
M5M5117FP, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
SWITCHING CHARACTERISTICS (Ta=0-70·C. Vee=5V±10%, unless otherwise noted)
READ CYCLE
Symbol
Parameter
teA
ta (A)
ta (S)
ta (DE)
tdis (S)
tdis (OE)
ten (S)
ten (DE)
tv (A)
Read cycle time
Address access time
Chip select access time
Output enable access time
Output disable time from S
Output disable time from OE
Output enable time from S
Output enable time from OE
Da·ta valid time from address
M5M5117FP-15
Limits
Min Typ Max
150
150
150
80
50
50
15
15,
20
Min
200
15
15
20
M5M5117FP
Limits
Typ
Max
200
200
100
60
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIM ING REQUI REM ENTS (Ta =0 -70'C, Vee=5V ± 10%, unless otherwise noted)
WRITE CYCLE
Symbol
Parameter
tew
tw(W)
tsu (A)
tsu (S)
tsu (D)
th (D)
tree (W)
tSU(DE)
tdIS(DE)
tdis (W)
ten (W)
Write cycle time
Write pulse width
Address set-up time
Chip select set-up time
Data set-up time
Data hold time
Write recovery time
OutPut enable set-up time
Output disable time from DE
Output disable time from write
Output enable time from write
M5M5117FP-15
Limits
Min Typ Max
150
90
a
90
40
a
10
40
50
50
15
M5M5117FP
Limits
Min Typ
200
120
a
120
60
a
10
40
15
Max
60
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN CHARACTERISTICS
ElECTR ICAl CHARACTER ISTICS (Ta =0 -70'C, unless otherwise noted)
Symbol
Parameter
Test conditions
Min
Vee (PD) Power·down supply voltage
2
V,es)
Chip select input voltage
2.2V~Vee(PD)
2V~Vee (PD)~2 .2V
2.2
ICC (PD)
Power-down supply current
Vee=3V, Other inputs =3V
Note 3. When S IS operated at 2.2V (VIH min), the supply current at which Vce (POl IS between 4.5V and 2.4V. is specified by lec4.
TIMING REQUIREMENTS (Ta=0-70'C, unless otherwise noted)
Limits
Typ
Vec (PD)
Max
10
Symbol
Parameter
tsu (PD)
tree (PD)
Power-down set-up time
Power-down recovery time
Test conditions
Limits
Min Typ Max
a
teA
Unit
V
V
V
"A
Unit
ns
ns
4-20
'. MITSUBISHI
;'ELECTRIC







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