Static RAM. M5M5118P Datasheet

M5M5118P RAM. Datasheet pdf. Equivalent

M5M5118P Datasheet
Recommendation M5M5118P Datasheet
Part M5M5118P
Description 16K-Bit CMOS Static RAM
Feature M5M5118P; .
Manufacture Mitsubishi
Datasheet
Download M5M5118P Datasheet




Mitsubishi M5M5118P
MITSUBISHI LSls
MSMSI18P, -15
16384-B1T (2048-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5118P series of 2048-word by 8-bit asynchronous
silicon gate CMOS static RAM operates on a single 5V
power supply and is designed for easy use in applications
requiring battery back - up_
Two chip select inputs, Sl and S2, are available to pro-
vide the minimum standby current with battery back-up_
The series is packaged in a standard 24-pin plastic OIL
package.
FEATURES
Type name
M5M5118P-15
M5M5118P
Access time
(max)
150ns
200ns
Current consumption
Active
(max)
Stand-by
(max)
50mA
15,uA
PIN CONFIGURATION (TOP VIEW)
A7 - 1
ADDRESS
INPUTS
A3
A,
A,
Ao
DATA DO,
1INPUTS/ DO,
OUTPUTS D03
(OV) GND
Vee (SV)
I23 ~ As
I22 ~ A, ADDRESS INPUTS
WRITE CONTROL
INPUT
20 ~ S, CHIP SELECT INPUT
" ~ AlO ADDRESS INPUT
18 ~ S, CHIP SELECT INPUT
DATA
INPUTS/
OUTPUTS
• Single 5V power supply.
• External clock and refresh operation not required.
• Data can be held with 2V supply voltage_
• All inputs and outputs are directly TTL compatible.
• All outputs are 3-state with OR-tie capability.
• Easy expansion of memory capacity with chip select
signal.
• Common input/output for data pins
APPLICATIONS
Battery drive, small-capacity memory units with battery
back-up
Outline 24 P4
FUNCTION
The M5M5118P series has a 2048-word by 8-bit configura-
tion. It operates on a single 5V supply and its inputs/
outputs are directly TTL compatible. Its completely static
circuitry obviates the need for external clock and refresh
operations and makes it very easy to use. The data of the
DO pin are written when the address is designated by
address signals Ao ~ AlO , the S; and S2 signals turn low-
level, and the IN signal is set low.
When for the reading operation the W signal is set high,
the Sl and S2 signals are set low, pin DO is set to the output
BLOCK DIAGRAM
A,
As
A,
A3
ADDRESS INPUTS
acu: 2048-WORD X 8-BIT
0
1.
0
~
128
RAM
x0 (128 ROWS
S
0
a: 128 COLUMNSI
DATA
INPUTS/OUTPUTS
WRITE CONTROL INPUT
I~CHIP SELECT INPUTS
18
8, ~~~~__________________________~
-'--------- - - - - - - - - - - - - - - - - - - - - - - ------~
• MITSUBISHI
"ELECTRIC
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Mitsubishi M5M5118P
MITSUBISHI LSls
M5M5118P, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
mode and the address is designated by signals Ao - AlO ,
the data of the designated address are output to pin DQ.
When signal S; or 52 cis set high, the chip is set to a non·
select status in which neither reading nor writing is possible.
5incethe output floats (high·impedance state), OR·tie is
possible with the other chip output pins.
The standby mode is established when signal 52, or signal
51 (with signal 52 at Vee or GND), is set to Vee. The
supply current is now reduced to the very low level of
15/lA (max) and data in the memory are retained even
if the supply voltage falls to 2V, permitting power-down
during non·operation or battery back·up during power
failures.
OPERATION MODES
s, S2 W
Mode
X H X Non-select
H X X Non-select
L L L Write
L L H Read
DQ
High impedance
High impedance
DIN
DOUT
'00
Standby
Standby
Active
Active
ABSOLUTE MAXIMUM RATINGS
Symbol
VOO
VI
Vo
Pd
Topr
TStg
Supply voltage
Parameter
Input voltage
Output voltage
Power dissipation
Operating free-air ambient temperature
Storage temperature
Conditions
With respect to GND
Ta ~25'C
Limits
~Oc3-7
-Oc3- Voe+0. 3
O-Vee
700
0-70
-60-150
RECOMMENDED OPERATING CONDITIONS (Ta~0-70'C. unlessotherwlSenoted)
Symbol
Vee
GND
VIL
VIH
Parameter
Supply voltage
Supply voltage
Low-level input voltage
High-level input voltage
Min
4.5
~0.3
2.2
Limits
Typ Max
5 5.5
0
0.8
Voo+0.3
Unit
V
V
V
V
ELECTRICAL CHARACTERISTICS (Ta~0-70'C. Vee~5V±10%, unless otherwise noted)
Symbol
V IH
VIL
V OH
VOL
'I
'OZH
'OZL
leol
'002
Parameter
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input current
Off-state high-level output current
Off-state low-level output current
Supply current
M5M5118P-15
M5M5118P
Supply current
M5M5118p·15
M5M5118P
I eC3
Standby supply current
'004
C,
Co
Standby supply current
Input capacitance (Ta =25~C)
Output capacitance (Ta =25~C)
Note 1· Current flowing into an IC shall be positive (no sign).
Typical values: Vee = 5V, Ta = 25°C.
Test conditions
Min
2.2
-0.3
10H~-lmA
2.4
IOL~2.1mA
V,~O-Veo
S, or S2~VIH, Vo~2 .4V-Voo
S,or S2~VIH, VO~OV
VI (5,) ~VI (52) ~OV Output pin open
Other inputs =Vcc
VI (S,)~VI (5;) ~VIL Output pin open
Other inputs = VIH
CDS2~VOO-Oc2V, Other inputs~O-Voe
® S1~VeC" Oc2V, S;;~Oc2V, Other inputs ~O - Vec
§2->:Oc2V, S;~VIH, Other inputs~O-Veo
VI~GND, VI=25mVrms, f~1MHz
Vo~GND, Vo~25mVrms, f~1MHz
Limits
Tya Max
Voo+Oc3
0.8
0.4
±1
1
~1
45
30 45
50
35 50
15
2
6
8
Unit
v
V
V
mW
'c
'c
Unit
V
V
V
V
t/A
t/A
t/A
mA
mA
mA
mA
t/A
mA
pF
pF
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• MITSUBISHI
;"ELECTRIC



Mitsubishi M5M5118P
MITSUBISHI LSls
MsMsI18P, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
SWITCHING CHARACTERISTICS (Ta~O-70'C, Vcc~5V±10%, unless otherwise noted)
READ CYCLE
Symbol
Parameter
tCR
ta (A)
ta (s 1l
ta (s,)
tdls (8,)
tdls (8,)
ten (8 , )
ten (s,)
tv (A)
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Output disable time from S1
Output disable time from S2
Output enable time from S1
Output enable time from S2
Data valid time from address
M5M5118P-15
Limits
Min TVp
150
15
15
20
Ma'
150
150
150
50
50
Min
200
15
15
20
M5M5118P
Limits
TVp
Max
200
200
200
60
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING REQUIREMENTS (Ta=0-70'C, Vcc=5V±10%, unless otherwise noted)
WRITE CYCLE
Symbol
Parameter
tew
tw(W)
tsu (A)
tsu (8)
tsu (0)
th (0)
tree (W)
tdis (w)
ten (W)
Write cycle time
Write pulse width
Address set-up time
Chip select set-up time
Data set-up time
Data hold time
Write recovery time
Output disable time from write
Output enable time from write
M5M5118P-15
Limits
Min TVp Max
150
90
0
90
40
0
10
50
15
M5M5118P
Limits
Min Typ Max
200
120
0
120
60
0
10
60
15
Unit
nn
ns
ns
ns
ns
ns
ns
ns
ns
POWER-DOWN CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta~0-70'C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Typ
Vee (PO)
V, (S)
Power-down supply voltage
Chip select input voltage
2,2V~VcC (PD)
2V~VCC (PO) ~2 ,2V
2
2,2
VCC (PO)
ICC (PO)
Power-down supply current
VCC~3V, Other inputs = 3 V
Note 3: When 5. or 52 IS operated at 2.2V (VIH min), the supply current at which Vce (PO) IS between 4.5V and 2.4V, IS specified by ICC4.
Max
10
Unit
V
V
V
/-LA
TIMING REQUIREMENTS (Ta=0-70'C, unless otherwise noted)
Symbol
tsu (PO)
tree (PD)
Parameter
Power-down set-up time
Power-down recovery time
Test conditions
Min
0
tCR
Limits
Typ
Max
ns
ns
• MITSUBISHI
"ELECTRIC
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