Static RAM. M5M5118FP Datasheet

M5M5118FP RAM. Datasheet pdf. Equivalent


Mitsubishi M5M5118FP
MITSUBISHI LSI.
M5M5118FP, -15
18384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
DESCRIPTION
The M5M5118FP series of 2048-word by 8-bit asynchro-
nous sificon gate CM05 static RAM operates on a single 5V
power supply and is designed for easy use in applications
requiring battery back-up_
Two chip select inputs, 51 and 52, are available to pro-
vide the minimum standby current with battery back-up_
The series is packaged in a small 24-pin plastic OIL flat
package_
FEATURES
Type name
Access time
(max)
M5M5118FP-15
M5M5118FP
lS0ns
200ns
Current consu,mPtion
Active
(maxi
Stand-by
(max)
SOmA
lS.uA
PIN CONFIGURATION (TOP VIEW)
Al - 1
ADDRESS
INPUTS
2. Vee (SV)
I23 ~ As
I22 ~ A. ADDR ESS INPUTS
WRITE CONTROL
INPUT
~ Si CHIP SELECT INPUT
,. ~ AlO ADDRESS INPUT
, 52~ CHIP SELECT INPUT
1_
1DATA DO, - •
INPUTSI D02 - '0
15 _
OUTPUTS D03 _ 11
1-
(ov) GND """"'-_ _ _....1r- _
DQ7
OQ6
DOs
DQ4
DATA
INPUTSI
OUTPUTS
• 5ingle 5V power supply.
• External clock and refresh operation not required.
• Data can be held with 2V supply voltage.
• All inputs and outputs are directly TTL compatible_
• All outputs are 3-state with OR-tie capability.
• Easy expansion of memory capacity with chip select
signal.
• Common input/output for data pins
APPLICATIONS
Battery drive, small-capacity memory units with battery
back-up
Outline 24P2W
FUNCTION
The M5M5118FP series has a 2048-word by 8-bit configura-
tion_ It operates on a single 5Vsupply and its inputs/
outputs are directly TTL comp~tible_ Its completely static
circuitry obviates the need for external clock and refresh
operations and makes it very easy to use. The data of the
DO pin are written when the address is designated by
address signals Ao - Ala, the 51 and 52 signals turn low-
level. and the Wsignal is set low_
When for the reading operation the W signal is set high.
the 51 and 52 signals are set low. pin DO is settothe output
BLOCK DIAGRAM
Al
A,
A,
ADDRESS INPUTS
2048-WORD X 8-BIT
RAM
(128 ROWS X
128 COLUMNS)
I-+,------<!Q) DO.
DATA
INPUTS/OUTPUTS
WRITE CONTROL INPUT Vi ~'I--;:::r)------I---------.J
CHIP SELECT ~INPUTS 1 ~'~ittl}---L----------.J
_s'~-l~~)- _ _ _ _ _ _ _ _ _ _ _--.J
Vee (SV)
1 OND (OV)
L---_ _-'- _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _----'
4-28
• -MITSUBISHI
""ELECTRIC
\


M5M5118FP Datasheet
Recommendation M5M5118FP Datasheet
Part M5M5118FP
Description 16K-Bit CMOS Static RAM
Feature M5M5118FP; MITSUBISHI LSI. M5M5118FP, -15 18384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5.
Manufacture Mitsubishi
Datasheet
Download M5M5118FP Datasheet




Mitsubishi M5M5118FP
MITSUBISHI LSls
M5M5118FP, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
mode and the address is designated by signals Ao ~ AIO ,
the data of the designated address are output to pin DQ.
When signal S; or S2 is set high, the chip is set to a non·
select status in which neither reading nor writing is possible.
Since the output floats (high·impedance state), OR·tie is
possible with the other chip output pins.
The standby mode is established when signal S2, or signal
SI (with signal S2 at Vee or GND), is set to Vee. The
supply current is now reduced to the very low level of
151lA (max) and data in the memory are retained even
if the supply voltage falls to 2V, permitting power·down
during non·operation or battery back·up during power
failu res.
OPERATION MODES
S, S, W
Mode
DO
X
H
X Non-select
High impedance
H
X
X Non-select
High impedance
L L L Write
L L H Read
D'N
DOUT
ICC
Standby
Standby
Active
Active
ABSOLUTE MAXIMUM RATINGS
Symbol
Vce
V,
Vo
Pd
Topr
Tstg
Supply voltage
Parameter
Input voltage
Output voltage
Power dissipation
Operating free-air ambient temperature
Storage temperature
Conditions
With respect to GND
Ta ~25'C
RECOMMENDED OPERATING CONDITIONS (Ta~0-70·C. unlesS01herwisen01ed)
Limits
-0.3-7
-0.3 -Vee+O 3
O-Vee
700
0-70
-60-150
Symbol
Vee
GND
V'L
V'H
Parameter
Supply voltage
Supply voltage
Low-level input voltage
High-level input voltage
Min
4.5
-0.3
2.2
Limits
Typ Max
5 5.5
0
0.8
VCC+0.3
Unit
V
V
V
V
ELECTRICAL CHARACTERISTICS (Ta~0-70'C. VCC~5V±10%. unlessotherwisenoted)
Symbol
Parameter
V'H
V'L
V OH
VOL
I,
'OZH
'aZL
leel
Icc,
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input current
Off-state high-level output current
Off-state low-level output current
Supply current
M5M5118FP-15
M5M5118FP
Supply current
M5M5118FP-15
M5M5118FP
IOC3
Standby supply current
loe4
C,
Co
Standby supply current
Input capacitance (Ta = 25°C)
Output capacitance (Ta =25"C)
Note 1 Current flowing into an Ie shall be positive (no sign).
2 Typical values: Vee = 5V, Ta = 25°C.
Test conditions
IOH~ -lmA
IOL~2.1mA
V,~O-Vce
Slor S,~V'H.VO~2.4V-Veo
Slor S,~V'H. VO~OV
Min
2.2
-0.3
2.4
VI (5,")=VIC5;) =OV Output pin open
Other inputs = Vee
VI (~) = VI <5;) = VIL Output pin open
Other inputs=VIH
CDS2~Vee-0.2V. Other inputs ~O-VCC
<2JS1~vec- 0.2V. S2S0.2V. Other inputs ~ 0- Vee
S,sO.2V. St~V'H. Other inputs~O-Vce
VI~GND. Vi~25mVrms. f~lMHz
Va~GND. VO~25mVrms. f~ 1MHz
Limits
Typ
Max
"cc+0 .3
0.8
0.4
±1·
1
-1
45
30 45
50
35 50
15
2
6
8
Unit
V
V
V
mW
'c
'c
Unit
V
V
V
V
/-I A
/-I A
/-I A
mA
mA
mA
mA
/-I A
mA
pF
pF
• MITSUBISHI
.... ELECTRIC
4-29



Mitsubishi M5M5118FP
MITSUBISHI LSls
MsMsI18FP, -15
16384-BIT (2048-WORD BY 8-BIT) CMOS STATIC RAM
SWITCHING CHARACTERISTICS (Ta~0-70·C, Vcc~5V±10%, unless otherwise noted)
READ CYCLE
Symbol
Parameter
tCA
ta (A)
ta (s,)
ta (5,)
tdis (5,)
tdis (5,)
ten (5,)
ten (5,)
tv (A)
Read cycle time
Address access time
Ch ip select 1 access 'time
Chip select 2 access time
Output disable time from S 1
Output disable time from S2
Output Bnable time from Sl
Output enable time from S2
Data valid time from address
M5M5118Fp·15
Limits
Min Tvp
150
15
15
20
Max
150
150
150
50
50
M5M5118FP
Limits
Min TVp
200
15
15
20
Max
200
200
200
60
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING REQUIREMENTS (Ta~0-70·C, Vcc~5V±10%, unless otherwise noted)
WRITE CYCLE
Symbol
Parameter
tew
tw(W)
tsu (A)
tsu (5)
tsu (0)
th (0)
tree (w)
tdis (W)
ten (w)
Write cycle time
Write pulse width
Address set-up time
Chip select set-up time
Data set-up time
Data hold time
Write recovery time
Output disable time from write
Output enable time from write
M5M5118Fp·15
Limits
Min Tvp Max
150
90
0
90
40
0
10
50
15
M5M5118FP
Limits
Min Tvp
200
120
0
120
60
0
10
15
Max
"
60
Unit
nn
ns
ns
ns
ns
ns
ns
ns
ns
POWE R·DOWN CHARACTER ISTICS
ELECTRICAL CHARACTERISTICS (Ta~0-70·C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min Tvp
VCC (PO)
Power-down supply voltage
2
V,(5)
Chip select input voltage
2 .2V ;;;:;Vcc (PO)
2V;;;:;Vcc (Po);;;:;2 "2V
2 "2
VCC (PO)
Icc (Po)
Power-down supply current
Vcc~3V , Other inputs = 3 V
Note 3: When 51 or S2 is operated at 2.2V (VIH min), the supply current at which Vee (PO) is between 4.5V and 2.4V, is specified by ICC4- .
Max
10
Unit
V
V
V
J.lA
T"IMING REQUIREMENTS (Ta~0-70·C, unless otherwise noted)
Symbol
tsu(PO)
tree (PO)
Parameter
Power-down set-up time
Power-down recovery time
Test conditions
Limits
Min TVp Max
0
tCA
Unit
ns
ns
4-30
• MITSUBISHI
;"ELECTRIC







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